Dependence of Channel Doping Concentration on Drain Induced Barrier Lowering for Asymmetric Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Symmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
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ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2016
ISSN: 2234-4772
DOI: 10.6109/jkiice.2016.20.4.805